PART |
Description |
Maker |
STD7N80K5 STU7N80K5 |
N-channel 800 V, 0.95 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in DPAK package N-channel 800 V, 0.95 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in IPAK package
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ST Microelectronics
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STP25N80K5 STF25N80K5 STW25N80K5 STB25N80K5 |
N-channel 800 V, 0.19 typ., 19.5 A SuperMESH 5 Power MOSFET in D2PAK N-channel 800 V, 0.19 typ., 19.5 A SuperMESH 5 Power MOSFET in D2PAK
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STMicroelectronics
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STF8N80K5 |
N-channel 800 V, 0.8 Ohm typ., 6 A Zener-protected SuperMESH(TM) 5 Power MOSFET in TO-220FP package
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ST Microelectronics
|
S6968-01 |
MOSFET, Switching; VDSS (V): 60; ID (A): 2; Pch : 0.8; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.111]; RDS (ON) typ. (ohm) @2.5V: 0.129; Ciss (pF) typ: 320; toff (µs) typ: 0.0397; Package: MPAK
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Hamamatsu Photonics
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UPSD3433E-40T6 UPSD3453E-40U6T UPSD3453E-40T6T UPS |
MOSFET, Switching; VDSS (V): 40; ID (A): 40; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.0038; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 2280; toff (µs) typ: 0.041; Package: LFPAK MOSFET, Switching; VDSS (V): 30; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0025; RDS (ON) typ. (ohm) @4V[4.5V]: [0.003]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7600; toff (µs) typ: 0.065; Package: LFPAK MOSFET, Switching; VDSS (V): 20; ID (A): 60; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.0021; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0028]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 7750; toff (µs) typ: 0.065; Package: LFPAK MOSFET, Switching; VDSS (V): 450; ID (A): 0.7; Pch : -; RDS (ON) typ. (ohm) @10V: 5.5; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 140; toff (µs) typ: -; Package: SOP-8 MOSFET, Switching; VDSS (V): 12; ID (A): 3.5; Pch : 0.9; RDS (ON) typ. (ohm) @10V: -; RDS (ON) typ. (ohm) @4V[4.5V]: [0.026]; RDS (ON) typ. (ohm) @2.5V: 0.034; Ciss (pF) typ: 770; toff (µs) typ: 0.036; Package: CMFPAK-6 MOSFET, Switching; VDSS (V): 80; ID (A): 30; Pch : 25; RDS (ON) typ. (ohm) @10V: 0.01; RDS (ON) typ. (ohm) @4V[4.5V]: [0.0115]; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 3520; toff (µs) typ: -; Package: WPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制 Turbo Plus Series Fast Turbo 8032 MCU with USB and Programmable Logic Turbo Plus系列高速涡032 USB和可编程逻辑控制 MOSFET, Switching; VDSS (V): 100; ID (A): 25; Pch : 30; RDS (ON) typ. (ohm) @10V: 0.012; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V: -; Ciss (pF) typ: 4350; toff (µs) typ: 0.037; Package: LFPAK Turbo Plus系列高速涡032 USB和可编程逻辑控制
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意法半导 STMicroelectronics N.V.
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021-3220 021-4510 021-4520 021-2220 042-3300 021-4 |
KNOB BLACK KNOB GREY ZIFFERNSCHEIBE TYP 3 KNOPFDM 14.5 ZIFFERNSCHEIBE TYP 0 KNOPFDM 14.5 PFEILSCHEIBE DM36.0 SCHWARZ ZIFFERNSCHEIBE TYP 1 KNOPFDM 36.0 ZIFFERNSCHEIBE TYP 2 KNOPFDM 14.5 ZIFFERNSCHEIBE TYP 1 KNOPFDM 14.5 ZIFFERNSCHEIBE TYP 9 KNOPFDM 14.5 ZIFFERNSCHEIBE典型9 KNOPFDM 14.5 ZIFFERNSCHEIBE TYP 8 KNOPFDM 21.0 ZIFFERNSCHEIBE典型8 KNOPFDM 21.0
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EPCOS AG
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SXL-316-TR2 SXL-316-BLK |
800-970 MHz, 50 Ohm power amplifier module. High 3rd order intercept: 52dBm typ. at 850 MHz. Devices per reel 1000. Reel size 13 800-970 MHz, 50 Ohm power amplifier module. High 3rd order intercept: 52dBm typ. at 850 MHz. Devices per reel 100/TRAY.
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Stanford Microdevices
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STW57N65M5 STI57N65M5 STP57N65M5 STB57N65M5 |
N-channel 650 V, 0.056 Ohm typ., 42 A MDmesh(TM) V Power MOSFET in D2PAK package N-channel 650 V, 0.056 typ., 42 A MDmesh V Power MOSFET N-channel 650 V, 0.056 Ω typ., 42 A MDmesh V Power MOSFET in I2PAK, TO-220, TO-220FP and D2PAK packages
|
ST Microelectronics STMicroelectronics
|
STP9N65M2 STD9N65M2 STF9N65M2 |
Extremely low gate charge N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220FP package N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in DPAK package N-channel 650 V, 0.79 Ohm typ., 5 A MDmesh M2 Power MOSFET in TO-220 package
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STMicroelectronics ST Microelectronics
|
STF11NM65N STFI11NM65N STD11NM65N STP11NM65N |
N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in I2PAKFP package N-channel 650 V, 0.425 Ω typ., 11 A MDmesh?II Power MOSFET in DPAK, TO-220FP, I2PAKFP and TO-220 packages N-channel 650 V, 0.425 ohm typ., 11 A MDmesh ll Power MOSFET N-channel 650 V, 0.425 Ohm typ., 11 A MDmesh(TM) II Power MOSFET in DPAK package
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STMicroelectronics ST Microelectronics
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S2744 S2744-08 S2744-09 S3588-08 S3588-09 |
MOSFET, Switching; VDSS (V): 150; ID (A): 17; Pch : -; RDS (ON) typ. (ohm) @10V: 0.089; RDS (ON) typ. (ohm) @4V[4.5V]: -; RDS (ON) typ. (ohm) @2.5V Si PIN photodiode Large area sensors for scintillation detection 硅PIN光电二极管的大面积闪烁探测传感器
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Hamamatsu Photonics K.K.
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